Light-emitting transistor

Light-emitting transistor (LET)
Working principle‍	Electroluminescence
Invented	Milton Feng Nick Holonyak

A light-emitting transistor or LET is a form of transistor that emits light. Higher efficiency than light-emitting diode (LED) is possible.

History

Reported in the January 5, 2004 issue of the journal Applied Physics Letters, Milton Feng and Nick Holonyak,^[1] the inventor of the first practical light-emitting diode (LED) and the first semiconductor laser to operate in the visible spectrum, made the world's first light-emitting transistor. This hybrid device, fabricated by Feng's graduate student Walid Hafez, had one electrical input and two outputs (electrical output and optical output) and operated at a frequency of 1 MHz. The device was made of indium gallium phosphide, indium gallium arsenide, and gallium arsenide, and emitted infrared photons from the base layer.^[2]^[3]

References

^ Feng, M.; Holonyak, N.; Hafez, W. (2004). "Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors". Applied Physics Letters. 84 (1): 151–153. Bibcode:2004ApPhL..84..151F. doi:10.1063/1.1637950.
^ "First Light-Emitting Transistor". IEEE Spectrum.
^ New light-emitting transistor could revolutionize electronics industry

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[1] Feng, M.; Holonyak, N.; Hafez, W. (2004). "Light-emitting transistor: Light emission from InGaP/GaAs heterojunction bipolar transistors". Applied Physics Letters. 84 (1): 151–153. Bibcode:2004ApPhL..84..151F. doi:10.1063/1.1637950.

[2] "First Light-Emitting Transistor". IEEE Spectrum.

[3] New light-emitting transistor could revolutionize electronics industry

[1]

[2]

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History

See also

References