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This is a list of semiconductor fabrication plants. A semiconductor fabrication plant is where integrated circuits (ICs), also known as microchips, are manufactured. They are either operated by Integrated Device Manufacturers (IDMs) who design and manufacture ICs in-house and may also manufacture designs from design-only (fabless firms), or by pure play foundries who manufacture designs from fabless companies and do not design their own ICs. Some pure play foundries like TSMC offer IC design services, and others, like Samsung, design and manufacture ICs for customers, while also designing, manufacturing and selling their own ICs.
Glossary of terms
- Wafer size – largest wafer diameter that a facility is capable of processing. (Semiconductor wafers are circular.)
- Process technology node – size of the smallest features that the facility is capable of etching onto the wafers.
- Production capacity – a manufacturing facility's nameplate capacity. Generally max wafers produced per month.
- Utilization – the number of wafers that a manufacturing plant processes in relation to its production capacity.
- Technology/products – Type of product that the facility is capable of producing, as not all plants can produce all products on the market.
Open plants
Operating fabs include:
Company | Plant name | Plant location | Plant cost (in US$ billions) | Started production | Wafer size (mm) | Process technology node (nm) | Production capacity (Wafers/Month) | Technology / products |
---|---|---|---|---|---|---|---|---|
UMC – He Jian | Fab 8N | China, Suzhou |
0.750,[1] 1.2, +0.5 | 2003, May[1] | 200 | 4000–1000, 500, 350, 250, 180, 110 | 77,000 | Foundry |
UMC | Fab 6A | Taiwan, Hsinchu |
0.35[1] | 1989[1] | 150 | 450 | 31,000 | Foundry |
UMC | Fab 8AB | Taiwan, Hsinchu |
1[1] | 1995[1] | 200 | 250 | 67,000[2] | Foundry |
UMC | Fab 8C | Taiwan, Hsinchu |
1[1] | 1998[1] | 200 | 350–110 | 37,000 | Foundry |
UMC | Fab 8D | Taiwan, Hsinchu |
1.5[1] | 2000[1] | 200 | 90 | 31,000 | Foundry |
UMC | Fab 8E | Taiwan, Hsinchu |
0.96[1] | 1998[1] | 200 | 180 | 37,000 | Foundry |
UMC | Fab 8F | Taiwan, Hsinchu |
1.5[1] | 2000[1] | 200 | 150 | 40,000 | Foundry |
UMC | Fab 8S | Taiwan, Hsinchu |
0.8[1] | 2004[1] | 200 | 350–250 | 31,000 | Foundry |
UMC | Fab 12A | Taiwan, Tainan |
4.65, 4.1, 6.6, 7.3[1] | 2001, 2010, 2014, 2017[1] | 300 | 28, 14 | 87,000[2] | Foundry |
UMC | Fab 12i | Singapore | 3.7[1] | 2004[1] | 300 | 130–40 | 53,000 | Foundry |
UMC – United Semiconductor | Fab 12X | China, Xiamen |
6.2 | 2016 | 300 | 55–28 | 19,000-25,000 (2021) | Foundry |
UMC – USJC (formerly MIFS) (formerly Fujitsu) | Fab 12M (original Fujitsu installations)[3] | Japan, Mie Prefecture |
1974 | 150, 200, 300[4] | 90–40 | 33,000 | Foundry | |
Texas Instruments | Miho | Japan, Ibaraki, Miho |
200 | 350, 250[5] | 40,000[6] | Analog, DLP[7] | ||
Texas Instruments (formerly Spansion) | Aizu[8] | Japan, Fukushima, Aizuwakamatsu |
200 | Analog | ||||
Texas Instruments (formerly National Semiconductor) | MFAB[9] | United States, Maine, South Portland |
0.932 | 1997 | 200 | 350, 250, 180 | Analog | |
Texas Instruments (formerly Micron) (formerly IM Flash) | LFAB | United States, Utah, Lehi |
1.3[10] (+ 3–4, future)[11] | 300 | 65–45 | 70,000 | Analog, mixed signal, logic
NAND FLASH (former), 3D XPoint (former) | |
Texas Instruments | RFAB1[12] | United States, Texas, Richardson |
2009 | 300 | 250, 180 | 20,000[13] | Analog | |
Texas Instruments | RFAB2 | United States, Texas, Richardson |
2022 | 300 | Analog | |||
Texas Instruments | DMOS5 | United States, Texas, Dallas |
1984 | 200 | 250, 180 | Analog, DLP | ||
Texas Instruments | DMOS6 | United States, Texas, Dallas |
2000 | 300 | 130–45 | 22,000[14] | Logic, Analog | |
Texas Instruments | DFAB | United States, Texas, Dallas |
1966 | 150, 200 | Mixed Signal, Analog | |||
Texas Instruments | SFAB | United States, Texas, Sherman |
1965 | 150 | Analog | |||
Texas Instruments | FFAB | Germany, Bavaria, Freising |
200 | 1000, 180 | 37,500 (450,000 per year)[15] | Analog | ||
Texas Instruments (formerly SMIC – Cension) | CFAB | China, Chengdu |
200 | 30,000[16] | Analog | |||
Tsinghua Unigroup[17] | China, Nanjing |
10 (first phase), 30 | Planned | 300 | 100,000 (first phase) | 3D NAND | ||
Tsinghua Unigroup – XMC (formerly Xinxin)[18] | Fab 1 | China, Wuhan[1] |
1.9 | 2008 | 300 | 90, 65, 60, 50, 45, 40, 32 | 30,000[19] | Foundry, NOR |
Tsinghua Unigroup – Yangtze Memory Technologies (YMTC) – XMC (formerly Xinxin)[18][19][17] | Fab 2 | China, Wuhan |
24 | 2018[1] | 300 | 20 | 200,000 | 3D NAND |
ChangXin Memory – (formerly Innotron Memory) | Fab 1[20] | China, Hefei |
8[21] | 2019[22] | 300 | 19 | 20,000–40,000 | DRAM |
SMIC | S1 Mega Fab (S1A/S1B/S1C)[23] | China, Shanghai |
200 | 350–90 | 115,000[24] | Foundry | ||
SMIC | S2 (Fab 8)[23] | China, Shanghai |
300 | 45/40–32/28 | 20,000 | Foundry | ||
SMIC – SMSC | SN1[23] | China, Shanghai |
10 | 2020[25] | 300 | 14 | 70,000[25] | Foundry |
SMIC | B1 Mega Fab (Fab 4, Fab 6)[23] | China, Beijing |
2004 | 300 | 180–90/55 | 52,000 | Foundry | |
SMIC | B2A[23] | China, Beijing |
3.59[26] | 2014 | 300 | 45/40–32/28 | 41,000 | Foundry |
SMIC | Fab 15[23] | China, Shenzhen |
2014 | 200 | 350–90 | 55,000 | Foundry | |
SMIC | Fab 7[23] | China, Tianjin |
2004 | 200 | 350–90 | 60,000[27] | Foundry | |
SMIC | Jingcheng | China, Beijing |
7.7[28] | Under construction | 300 | 28 | 100,000 | Foundry |
SMIC | Lingang | China, Shanghai |
8.87[29] | Under construction | 300 | 28 | 100,000 | Foundry |
SMIC | Shenzhen | China, Shenzhen |
2.35[30] | Under construction | 300 | 28 | 40,000 | Foundry |
SMIC | Xiqing | China, Tianjin |
7.5[31] | Under construction | 300 | 28 | 100,000 | Foundry |
Wuxi Xichanweixin (formerly SMIC – LFoundry ) (formerly LFoundry ) (formerly Micron)[32] (formerly Texas Instruments) | LF | Italy, Abruzzo, Avezzano |
1995 | 200 | 180–90 | 40,000 | ||
Nanya | Fab 2 | Taiwan, Linkou |
0.8 | 2000 | 200[33] | 175 | 30,000 | DRAM |
Nanya | Fab 3A[34] | Taiwan, New Taipei City[35] |
1.85[36] | 2018 | 300 | 70-20 | 34,000[37]
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